Positron annihilation study of the annealing behaviour of alpha induced defects in tungsten
作者:
P.M. G. Nambissan,
P. Sen,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1992)
卷期:
Volume 124,
issue 2
页码: 215-221
ISSN:1042-0150
年代: 1992
DOI:10.1080/10420159208220193
出版商: Taylor & Francis Group
关键词: alpha-irradiated tungsten;positron annihilation;isochronal annealing;vacancy clusters;microvoids
数据来源: Taylor
摘要:
Positron lifetime and Doppler broadening measurements have been performed on alpha-irradiated tungsten to study the evolution of defects during isochronal annealing from 100°C to 1050°C. Vacancy-impurity complexes dissociate at the earlier stages and release the vacancies. Monovacancies start migrating at 400°C. The vacancy clusters coarsen to form microvoids in the region from 350°C to 650°C and remain stable upto 750°C. Some of the clusters collapse into vacancy loops. Dislocation/vacancy loops and microvoids start annealing around 750°C. The role of impurities and grain boundaries on the annealing behaviour of the defects is also discussed.
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