Tunneling through asymmetric double‐barrier quantum‐well heterostructures
作者:
C. Rossel,
P. Gue´ret,
H. P. Meier,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 2
页码: 900-903
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345750
出版商: AIP
数据来源: AIP
摘要:
Data obtained from a set of asymmetric GaAs/AlGaAs double‐barrier resonant tunneling structures is presented. Low‐temperatureI(V) characteristics, temperature dependencies, and magnetotunneling have been investigated. The data confirm conclusions drawn in previous studies on symmetric structures, lending further support to the description of tunneling in terms of sequential processes and momentum randomization most likely induced by interface roughness scattering in the well.
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