首页   按字顺浏览 期刊浏览 卷期浏览 One-dimensional numerical simulation of complementary power Schottky structures
One-dimensional numerical simulation of complementary power Schottky structures

 

作者: T.Rang,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  (IET Available online 1985)
卷期: Volume 132, issue 6  

页码: 253-256

 

年代: 1985

 

DOI:10.1049/ip-i-1.1985.0056

 

出版商: IEE

 

数据来源: IET

 

摘要:

A short review of the history and modelling of Schottky structures is given. A one-dimensional numerical model including tunnelling and avalanche breakdown effects for the Schottky structures is described. Simulation results on complementary power Schottky structures for the three different barrier heights (data for Cr, W, Al) are carried out for DC and transient response.

 

点击下载:  PDF (520KB)



返 回