One-dimensional numerical simulation of complementary power Schottky structures
作者:
T.Rang,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1985)
卷期:
Volume 132,
issue 6
页码: 253-256
年代: 1985
DOI:10.1049/ip-i-1.1985.0056
出版商: IEE
数据来源: IET
摘要:
A short review of the history and modelling of Schottky structures is given. A one-dimensional numerical model including tunnelling and avalanche breakdown effects for the Schottky structures is described. Simulation results on complementary power Schottky structures for the three different barrier heights (data for Cr, W, Al) are carried out for DC and transient response.
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