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Sputter‐induced roughness in thermal SiO2during Auger sputter profiling studies of the Si–SiO2interface

 

作者: C. F. Cook,   C. R. Helms,   D. C. Fox,  

 

期刊: Journal of Vacuum Science and Technology  （AIP Available online 1980）
卷期: Volume 17, issue 1  

页码: 44-46

 

ISSN:0022-5355

 

年代: 1980

 

DOI:10.1116/1.570480

 

出版商: American Vacuum Society

 

关键词: SILICON OXIDES;SURFACES;SILICON;INTERFACES;SPUTTERING;ARGON IONS;KEV RANGE 01−10;ELECTRON MICROSCOPY;AUGER ELECTRON SPECTROSCOPY;MORPHOLOGY;OXIDATION;VERY HIGH TEMPERATURE;REPLICA TECHNIQUES

 

数据来源: AIP

 

摘要:

We have used transmission electron microscopy replica techniques in conjunction with Auger sputter profiling (ASP) to study the effect of sputtering on the morphology of SiO2surfaces. 1 keV Ar ions incident 49° from the surface normal induce a ridge and valley structure with the ridges running normal to the ion beam direction. The degree of roughness is proportional to the amount of SiO2removed by sputtering and appears to have no effect on the width of the Si–SiO2interface as seen by ASP.

 

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