Low energy and low dose B+‐implanted Si has been studied using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). Czochralski‐grown (100) Si wafers were implanted with 4 keV B+to a dose of 1×1014/cm2. Subsequently, anneals were performed between 700 and 800 °C for times between 15 s and 8 h in an ambient atmosphere of N2. SIMS results show transient enhanced diffusion (TED) of the boron that saturates in less than 15 min for all annealing temperatures studied. TED results in an increase in the junction depth by at least 60 nm at a 1×1016/cm3concentration. TEM studies show that, even for the shortest times before TED is observed, {311} defects are not detected. These results imply that there may be more than one source of interstitials for TED. ©1995 American Institute of Physics.