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Ion‐Current and Schottky Effects in Thermionic Diodes

 

作者: L. K. Hansen,  

 

期刊: Journal of Applied Physics  (AIP Available online 1967)
卷期: Volume 38, issue 11  

页码: 4345-4354

 

ISSN:0021-8979

 

年代: 1967

 

DOI:10.1063/1.1709127

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An experimental and theoretical study is made of current nonsaturation phenomena in cesium vapor, thermionic diodes. It is shown that ion flow from the plasma to the emitter electrode produces a significant nonsaturation effect. It is also shown that this ion current produces a high‐sheath field at the emitter which accentuates the nonsaturation through the Schottky and anomalous Schottky effects. These effects are incorporated into an analysis of diode behavior. It is shown that the expected diode behavior due to ion‐current and Schottky effects is consistent with available experimental data.

 

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