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Direct‐current and radio‐frequency properties of InAlAs/InGaAs pseudomorphic modulation doped field effect transistors with graded channels

 

作者: J. Kolodzey,   J. Laskar,   S. Boor,   S. Agarwala,   S. Caracci,   A. A. Ketterson,   I. Adesida,   K. C. Hsieh,   D. Sivco,   A. Y. Cho,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 2  

页码: 360-363

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.585071

 

出版商: American Vacuum Society

 

关键词: INDIUM ALLOYS;ALUMINIUM ALLOYS;ARSENIC ALLOYS;GALLIUM ALLOYS;EPITAXIAL LAYERS;ELECTRICAL PROPERTIES;FIELD EFFECT TRANSISTORS;FABRICATION;HIGH VACUUM;INTERFACES;(Al,In)As:Si;(Ga,In)As:Si

 

数据来源: AIP

 

摘要:

We report comprehensive high‐frequency characteristics of pseudomorphic InAlAs/InGaAs/InP modulation doped field effect transistors having thick, dislocation‐free channels with an In mole fraction compositionally graded tox=0.65 at the heterointerface. Grading was achieved by reducing the Ga effusion cell temperature during epitaxial growth. High‐frequencyS‐parameter measurements were performed on transistors having gate lengths ofLg=0.25 μm and showed significant increases in both transconductancegmand current gain cutoff frequencyfTwith increasing graded channel layer thickness. The best devices with a 30 nm channel havegm=720 mS/mm andfT=120 GHz. We give data on growth conditions, layer structure, and device electrical properties.

 

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