A technique and a particular apparatus for an inductive measurement of critical currents as a function of temperature and magnetic field in thin‐film superconductors are described. The technique has been found to be particularly useful for high‐field A‐15 compounds 2 to 3 &mgr;m thick. Samples with lower critical current densities would have to be correspondingly thicker to measure over the same broad range of temperature and field. The design of the apparatus is detailed showing that the film can be taken directly from the deposition chamber and mounted without electrical contacts so samples can be changed easily. The principles of operation are developed based on the Critical State Model. These principles are tested by measurements which verify that the measured value of critical curent is independent of the amplitudes and frequency of the small ac magnetic field which is added to a much larger quasistatic field. The inductive measurements are compared with results of transport current measurements on a film which had been etched in a four‐point bridge pattern. The two techniques give the same values when a 1‐&mgr;V criterion is used to define the critical transport current.