Oxidation of tantalum disilicide on polycrystalline silicon
作者:
S. P. Murarka,
D. B. Fraser,
W. S. Lindenberger,
A. K. Sinha,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 6
页码: 3241-3245
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328080
出版商: AIP
数据来源: AIP
摘要:
Oxidation characteristics of the tantalum disilicide films have been investigated in the temperature range of 900°–1050 °C in dry oxygen and steam ambients. The silicide does not oxidize in dry oxygen and oxidizes in steam at a rate lower than that of doped polycrystalline silicon films as long as there is a polycrystalline silicon layer between the silicide and the gate oxide. Under these circumstances, the silicide retains its electrical and mechanical characteristics. The oxide on the silicide has an etch rate (in buffered hydrofluoric acid) similar to that of thermal SiO2on silicon. Electrical characteristics of the oxide appear to be similar to those of the wet oxide on polycrystalline silicon. In the absence of polycrystalline silicon, between the silicide and the gate oxide, oxidation leads to a loss in the conductivity of the silicide and eventually to a mechanical instability of the film. An oxidation mechanism, which assumes silicon diffusion by substitution through the silicide, has been proposed.
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