首页   按字顺浏览 期刊浏览 卷期浏览 Study on microstructure of ordered InGaAs crystals grown on (110)InP substrates by tran...
Study on microstructure of ordered InGaAs crystals grown on (110)InP substrates by transmission electron microscopy

 

作者: Osamu Ueda,   Yoshiaki Nakata,   Toshio Fujii,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 58, issue 7  

页码: 705-707

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104521

 

出版商: AIP

 

数据来源: AIP

 

摘要:

CuAu‐I type ordered structures in InGaAs grown on (110)InP substrates by molecular beam epitaxy, have been studied by transmission electron microscopy. In the electron diffraction pattern from the InGaAs, superstructure spots associated with CuAu‐I type ordered structure are found. The intensity of the superstructure spots becomes stronger as the tilting angle of the substrate increases up to 5°. In high‐resolution images of the crystal, doubling in periodicity of 220 and 200 lattice fringes is found, which is associated with CuAu‐I type ordered structure. Moreover, anti‐phase boundaries are very often observed in the ordered regions, which has been suggested by Kuanetal. [Appl. Phys. Lett.51, 51 (1987)]. It is also found that ordering is not perfect, and that ordered regions are plate‐like microdomains lying on planes slightly tilted from the (110) plane. From these results, it is suggested that atomic steps on the growth surface play an important role in the generation of ordered structures.

 

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