Magnetostatic field effect on threshold current in a GaAs/AlyGA1‐yAs double‐heterostructure laser
作者:
H. C. Hsieh,
G. Y. Lee,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 7
页码: 4414-4417
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.329354
出版商: AIP
数据来源: AIP
摘要:
The magnetostatic field dependence of the threshold current density in a GaAs/AlyGA1‐yAs double‐heterostructure laser is investigated with the aid of the solution of the electron diffusion equation. The reduction of the threshold current density by increasing the magnetic field strength can be significant when the difference in the energy band gap of the active and inactive layers at the heterojunction is small.
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