The damage in Fe‐doped InP induced by 1.0 MeV P ion implantation with doses ranging from 5×1013to 2×1015cm−2and effects of rapid thermal annealing (RTA) in the range of 700‐1050 °C were investigated by means of Raman scattering. The shift and asymmetrical broadening of the longitudinal optical phonon peak (LO) and the appearance of a transverse optical mode (TO) show that the Raman scattering is very sensitive to implantation damage. For doses larger than 5×1014cm−2, the TO and LO peaks were markedly broadened, even merged into a single peak, indicating an amorphous structure in the near surface region. Much of the primary damage can be annealed out after RTA at 800 °C for all implantation doses. For RTA below 900 °C, the residual damage decreased with increasing annealing temperature for the low dose case of 1×1014cm−2, but increased for the high dose case of 2×1015cm−2. Only when the annealing temperature is over 900 °C, the residual defects of the high dose case drastically decrease, and nearly full recovery is obtained when the annealing temperature is raised to 1000–1050 °C. ©1996 American Institute of Physics.