Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111)
作者:
K. S. Stevens,
M. Kinniburgh,
R. Beresford,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 25
页码: 3518-3520
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113783
出版商: AIP
数据来源: AIP
摘要:
This work characterizes a GaN:Mg on silicon ultraviolet photodetector with a cutoff at 3.3 eV and a responsivity of 12 A/W at 4 V bias for optical intensities on the order of 1 W/m2and below. A weak photovoltaic response is also reported. The photocurrent is nearly linear versus optical intensity for up to 10 W/m2. The responsivity increases nearly linearly with applied voltage up to 8 V, then the increase slows toward saturation. To explain this high responsivity in a direct gap semiconductor, it is hypothesized that holes are captured at either compensated Mg deep acceptor sites or Mg‐related trap/recombination centers, resulting in a greatly prolonged electron free‐carrier lifetime. ©1995 American Institute of Physics.
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