In this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance–voltage(CV)measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to measuredCVcurves for ferroelectric thin-film capacitors is found to be analogous to the well-known result of metal–semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrical doping concentration of ferroelectric thin-film capacitors can be profiled accurately with the proposed model. Limitations of the model are investigated. ©1997 American Institute of Physics.