Single‐crystalline silicon films on insulator (SOI) were formed by using lateral solid‐phase epitaxy (LSPE) induced by irradiation of a focused Si ion beam (beam‐induced LSPE). When the irradiation was done with the beam scanned over a few microns width, it was found that the beam‐induced LSPE was hindered by the beam‐induced polycrystallization in SOI regions. In order to avoid the polycrystallization and to obtain long LSPE, a pseudolinear beam was used so that only the area near the amorphous/crystalline interface was irradiated without unnecessary irradiation to SOI regions. To continue the LSPE, the sweep velocity of the beam should be carefully selected to match with the enhanced LSPE rate, which depends on the dose rate. The maximum LSPE rate obtained was 30 nm/s for the dose rate of 3×1015cm−2 s−1at 500 °C and the LSPE has been extended to 20 μm from the seed.