Molecular‐beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
作者:
J. M. Gaines,
P. M. Petroff,
H. Kroemer,
R. J. Simes,
R. S. Geels,
J. H. English,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 4
页码: 1378-1381
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584225
出版商: American Vacuum Society
关键词: GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;THIN FILMS;SUPERLATTICES;CRYSTAL DEFECTS;SURFACE STRUCTURE;INTERFACE STRUCTURE;FABRICATION;MOLECULAR BEAM EPITAXY;MONOLAYERS;GaAs;(Al,Ga)As
数据来源: AIP
摘要:
We report the successful growth of GaAs/AlAs superlattices having interface planes tilted with respect to the substrate surface plane. The amount of tilt and the superlattice period may be controlled by adjusting the growth parameters. The tilted superlattices (TSL’s) were produced by depositing fractional monolayer superlattices (GaAs)m(AlAs)n, withp=m+n≂1, on vicinal (001) substrates. We demonstrate the growth of quantum wirelike structures produced by placing short sections of TSL between horizontal layers of AlAs. Variations of the TSL period and tilt, both on uniform surfaces and on surfaces containing defects, yield insight to the growth kinetics and to the influence of variations in the growth parameters during molecular‐beam epitaxy growth.
点击下载:
PDF
(500KB)
返 回