Mechanism of yellow luminescence in GaN
作者:
T. Suski,
P. Perlin,
H. Teisseyre,
M. Leszczyn´ski,
I. Grzegory,
J. Jun,
M. Boc´kowski,
S. Porowski,
T. D. Moustakas,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 15
页码: 2188-2190
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115098
出版商: AIP
数据来源: AIP
摘要:
We investigated the pressure behavior of yellow luminescence in bulk crystals and epitaxial layers of GaN. This photoluminescence band exhibits a blueshift of 30±2 meV/GPa for pressures up to about 20 GPa. For higher pressure we observe the saturation of the position of this luminescence. Both effects are consistent with the mechanism of yellow luminescence caused by electron recombination between the shallow donor (or conduction band) and a deep gap state of donor or acceptor character. ©1995 American Institute of Physics.
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