Front‐emitting InP/InGaAsP LEDs are presently used for optical communications. They operate at 1.3 μm, the wavelength at which dispersion is minimum for silica fibers. In this paper, we discuss the use of an electron‐beam‐deposited Al2O3antireflection coating to increase the coupled power from a 1.3‐μm InP/InGaAsP LED and thereby increase the transmission distance as well. Al2O3is chosen since its index of refraction (n∼1.77) is very close to the optimum value ofn=1.79 for a single layer AR coating on InP at λ=1.3 μm. Additionally, the Al2O3coefficient of thermal expansion (α∼5.6×10−6/K) nearly matches that of InP (α∼4.5×10−6/K). A factor of 1.31 ± 0.08 increase in power, butt‐coupled into an FT3 fiber, was obtained after coating 1.3‐μm InP/InGaAsP LEDs with a 1850‐Å‐thick Al2O3film. Furthermore, the Al2O3coating process is simple and produces AR coatings which compare favorably with optimum hydrogen containing silicon nitride films.