Electrical characteristics of Zn in heavily doped InP grown by the liquid‐encapsulated Czochralski technique
作者:
R. Hirano,
T. Kanazawa,
T. Inoue,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 71,
issue 2
页码: 659-663
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.351351
出版商: AIP
数据来源: AIP
摘要:
The electrical activity of Zn in heavily doped InP crystals grown by the liquid‐encapsulated Czochralski technique has been studied through annealing experiments. When the wafers were annealed at 650 °C, the saturated hole concentration increased as the cooling rate after the heat treatment increased. Annealing at 400 °C led to a reduction in the saturated hole concentration, which was not dependent on the cooling rate after the heat treatment. Some defect reactions at 400 °C would account for this phenomenon. The experimental results of the saturation of the hole concentration may be explained in terms of a defect state whose nature depends on the Fermi level position, as has been suggested by Walukiewicz [Appl. Phys. Lett.54, 2094 (1989)].
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