Dry etching and consequent burring regrowth using anin situultrahigh vacuum multichamber system were investigated for nanometer-size fine patterns. Narrow stripe patterns with width variations from 30 to 5000 nm were fabricated on GaAs/AlGaAs single quantum wells using electron-beam lithography. The wafer was then etched and regrown in anin situmultichamber system. Using thisin situprocess along with a H-plasma treatment before regrowth, the surface nonradiative recombination velocity was able to be greatly reduced to6.8×104 cm−1from that of as-etched wafers(1.9×105 cm−1)estimated by measuring time-resolved photoluminescence (PL). Also, the size dependence of the PL intensity was able to be greatly improved to a degree that exceeded the InGaAs/InP wafers.