Plasma‐deposited silylation resist for 193 nm lithography
作者:
Mark W. Horn,
Mordechai Rothschild,
Brian E. Maxwell,
Russell B. Goodman,
Roderick R. Kunz,
Lynn M. Eriksen,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 2
页码: 179-181
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116452
出版商: AIP
数据来源: AIP
摘要:
Plasma‐deposited carbon‐based polymer films are examined for use as an all‐dry positive‐tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 &mgr;m have been obtained with a 0.35 numerical aperture projection system. ©1996 American Institute of Physics.
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