Knight shift and specific beat near the metal-insulator transition
作者:
M. Kaveh,
A. Liebert,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1988)
卷期:
Volume 58,
issue 5
页码: 247-254
ISSN:0950-0839
年代: 1988
DOI:10.1080/09500838808214760
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
We study the question of whether the metal-insulator transition in a doped semiconductor takes place in a conduction band or in an impurity band. Our calculations of the Knight shift and the specific heat indicate that the transition takes place in an impurity band. We use a tight-binding model to calculate the electron wavefunctions and density of states and obtain good agreement with the measured Knight shift and specific heat of Si: P. By contrast, the nearly-free-electron model, appropriate to a conduction band, fails to account for the Knight shift measured at the phosphorus nuclei in Si: P.
点击下载:
PDF (456KB)
返 回