Ion-induced annealing of damage in GaAs implanted with argon ions
作者:
A.N. Akimov,
L.A. Vlasukova,
G.A. Gusakov,
F.F. Komarov,
A.A. Kutas,
A.P. Novikov,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1994)
卷期:
Volume 129,
issue 3-4
页码: 147-154
ISSN:1042-0150
年代: 1994
DOI:10.1080/10420159408229013
出版商: Taylor & Francis Group
关键词: implantation;GaAs;structure restoration;ion-beam induced annealing
数据来源: Taylor
摘要:
The process of the structure restoration of GaAs implanted with Ar+ions at the ion current densities of 10 and 25 μA/cm2and in the fluence interval of 6 × 1013–1 × 1016cm−2has been analysed on the basis of Raman scattering (RS) and Rutherford backscattering (RBS) data taken into account the target heating during the irradiation. The current dependence of threshold fluences which the recrystallization begin at is explained in assumption that the structure restoration is caused of by the mobile monovacancies interaction with the stable vacancy cluster. The existence of the critical ion fluence corresponded to the most perfect GaAs structure has been shown.
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