The calculation for the compressive stress dependence of silicon diode current is refined for the⟨100⟩and⟨111⟩crystal orientations. The stress dependence of the density‐of‐states effective masses of hole bands is taken into account on the basis of Hasegawa's theory. An anomalous peak is predicted at a stress of ∼ 109dyn/cm2due to the stress dependence of the heavy hole effective masses. For the⟨111⟩orientation, a small minimum appears at a stress of ∼ 108dyn/cm2. The stress dependence of the common‐emitter transistor current gain &bgr; can be explained by the combined effects of the stress dependence of the emitter efficiency related to the above‐mentioned calculation and the stress dependence of the base transport factor. The difference of stress dependence of &bgr; betweenn‐p‐nandp‐n‐ptransistors can also be explained. It is predicted that &bgr; goes through a minimum at a stress of ∼ 109dyn/cm2. Suggestions concerning thermal stress on transistors in large‐scale integration are made.