Optical investigation of growth mode of Ge thin films on Si(110) substrates
作者:
J. Arai,
A. Ohga,
T. Hattori,
N. Usami,
Y. Shiraki,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 6
页码: 785-787
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119645
出版商: AIP
数据来源: AIP
摘要:
A unique growth mode of Ge on Si(110) substrates was clarified by photoluminescence (PL) spectroscopy. A spectral redshift and an increase of the relative no-phonon intensity were found for PL from the two-dimensional Ge layer on Si(110) compared to that on Si(100). These results likely arise from nonuniformity in the Ge layer thickness owing to the step-bunched Si(110) surface and resultant exciton localization. The two-dimensional to three-dimensional growth mode changeover was observed as evidenced by emergence of broad PL from Ge islands. In contrast to Ge on Si(100) PL from the wetting layer was found to show continuous redshift with increasing Ge coverage even after Ge island formation. ©1997 American Institute of Physics.
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