Ion beam induced chemical vapor deposition procedure for the preparation of oxide thin films. I. Preparation and characterization of TiO2thin films
作者:
D. Leinen,
J. P. Espinós,
A. Fernández,
A. R. González‐Elipe,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1994)
卷期:
Volume 12,
issue 5
页码: 2728-2732
ISSN:0734-2101
年代: 1994
DOI:10.1116/1.579096
出版商: American Vacuum Society
关键词: TITANIUM OXIDES;THIN FILMS;CVD;ION BEAMS;PLASMA SOURCES;COMPARATIVE EVALUATIONS;PRECURSOR;FILM GROWTH;REFRACTIVE INDEX;PHOTOELECTRON SPECTROSCOPY;TiO2
数据来源: AIP
摘要:
A new method of preparation of oxide thin films is presented in this paper. The method consists of the bombardment of a substrate with accelerated O+2species while a flow of a volatile organometallic precursor is directed on its surface. This ion beam induced chemical vapor deposition procedure (IBICVD) has been used to prepare TiO2thin films from Ti(CH3CH2O)4as a precursor. Also, for comparison, TiO2thin films have been grown by a plasma assisted chemical vapor deposition (CVD) method. A study of the growing process has been carried out by x‐ray photoelectron spectroscopy (XPS), while the films have been characterized by XPS, scanning electron microscopy, transmission electron spectroscopy, and UV‐visible (UV‐vis) spectroscopy. Values of the refraction index of the TiO2films prepared by IBICVD are similar to those of other TiO2prepared by ion beam assisted methods as given in the literature, but superior to those of the films grown in the present study by plasma assisted CVD.
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