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Oligophenyl-based organic thin film transistors

 

作者: D. J. Gundlach,   Y.-Y. Lin,   T. N. Jackson,   D. G. Schlom,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 26  

页码: 3853-3855

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120524

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Organic thin film transistors (TFTs) have been fabricated using thermally evaporated films of the oligophenylsp-quaterphenyl (p-4P),p-quinquephenyl (p-5P), andp-sexiphenyl (p-6P). The field-effect mobility of these TFTs ranges from10−2 cm2/V sforp-4P to10−1 cm2/V sforp-6P with on/off current ratio from105to106.These values are comparable to those achieved using the more widely studied organic semiconductors alpha-sexithienyl (&agr;-6T) and pentacene. X-ray diffraction reveals a high degree of molecular ordering, believed to be important for obtaining high field-effect mobility in organic TFTs. ©1997 American Institute of Physics.

 

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