Oligophenyl-based organic thin film transistors
作者:
D. J. Gundlach,
Y.-Y. Lin,
T. N. Jackson,
D. G. Schlom,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 26
页码: 3853-3855
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120524
出版商: AIP
数据来源: AIP
摘要:
Organic thin film transistors (TFTs) have been fabricated using thermally evaporated films of the oligophenylsp-quaterphenyl (p-4P),p-quinquephenyl (p-5P), andp-sexiphenyl (p-6P). The field-effect mobility of these TFTs ranges from10−2 cm2/V sforp-4P to10−1 cm2/V sforp-6P with on/off current ratio from105to106.These values are comparable to those achieved using the more widely studied organic semiconductors alpha-sexithienyl (&agr;-6T) and pentacene. X-ray diffraction reveals a high degree of molecular ordering, believed to be important for obtaining high field-effect mobility in organic TFTs. ©1997 American Institute of Physics.
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