We have realized by cleaved edge overgrowth a two‐dimensional electron gas system in a one‐dimensional lateral superlattice consisting of 100 periods of 120 A˚ GaAs/20 A˚ AlGaAs. These devices exhibit nonlinearI–V, including negative differential resistance, at high electric fields. We demonstrate, by monitoring the changes in the two‐dimensional electron density, that the nonlinearI–Vis due to high field induced electron trapping. ©1995 American Institute of Physics.