Wavelength‐shifted GaAs/AlGaAs Fabry–Pe´rot ridge waveguide lasers were fabricated by vacancy‐enhanced quantum well disordering using dielectric cap annealing. 500 &mgr;m long and 4 &mgr;m wide Fabry–Pe´rot lasers with emission wavelengths selectively shifted by 20 nm were integrated with unshifted lasers on the same chip, characterized and further compared with lasers fabricated from as‐grown material. These investigations showed that the absorption edge of a single‐quantum well double heterostructure can be selectively blueshifted after epitaxial growth without compromising diode laser performance. ©1995 American Institute of Physics.