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The effect of a nitrogen atmosphere on the lower yield point of silicon

 

作者: Hans Siethoff,  

 

期刊: Philosophical Magazine Letters  （Taylor Available online 1988）
卷期: Volume 58, issue 3  

页码: 129-133

 

ISSN:0950-0839

 

年代: 1988

 

DOI:10.1080/09500838808214744

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Nitrogen in the forming gas used in deformation experiments as a protecting atmosphere affects the yield point of silicon single crystals at high temperatures. This may explain some unusual results recently published in the literature.

 

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