Study of the interface of undoped andp‐doped ZnSe with GaAs and AlAs
作者:
L. Kassel,
H. Abad,
J. W. Garland,
P. M. Raccah,
J. E. Potts,
M. A. Haase,
H. Cheng,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 1
页码: 42-44
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102641
出版商: AIP
数据来源: AIP
摘要:
We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space‐charge regions enabled us to detect both interface crossover transitions and transitions to triangular‐well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.
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