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30 keV to 2 MeV Boron implantation profiles in solids

 

作者: D. Fink,   L. Wang,   J.P. Biersack,   F. Jahnel,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1990）
卷期: Volume 115, issue 1-3  

页码: 93-112

 

ISSN:1042-0150

 

年代: 1990

 

DOI:10.1080/10420159008220558

 

出版商: Taylor & Francis Group

 

关键词: Boron implantation profiles;neutron depth profiling;ranges;straggling

 

数据来源: Taylor

 

摘要:

Boron was implanted into several solids in the dose regime 1014to 1016ions/cm2and at energies between some 10 keV and some MeV. Measurements of the corresponding depth distributions were performed by means of the10B(n, α0)7Li(gnd) and10B(n, α1)7Li*(1st) nuclear reaction techniques with thermal neutrons, and by SIMS. The results are compared to theoretical predictions.

 

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