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Short‐channel MOS FET’s fabricated by self‐aligned ion implantation and laser annealing

 

作者: M. Koyanagi,   H. Tamura,   M. Miyao,   N. Hashimoto,   T. Tokuyama,  

 

期刊: Applied Physics Letters  （AIP Available online 1979）
卷期: Volume 35, issue 8  

页码: 621-623

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.91229

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Short‐channel MOS FET’s are successfully fabricated usingQ‐switched ruby laser irradiation on As‐implanted sources and drains. Implantation and laser irradiation are both self‐aligned by the polysilicon gate electrodes. The threshold‐voltage–vs–channel‐length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.

 

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