New low temperature preparation of ferroelectric Bi4Ti3O12thin films by MOCVD method
作者:
Takeshi Kijima,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 26,
issue 1-4
页码: 93-101
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215614
出版商: Taylor & Francis Group
关键词: MF(I)S-FET;ferroelectric thin film;Bi4Ti3O12;bismuth silicate;Bi2SiO5;MOCVD
数据来源: Taylor
摘要:
Pt/Bi4Ti3O12(001)/Bi2SiO5(100)/Si(100) structures have been fabricated by the metal-organic chemical vapor deposition (MOCVD) at 500°C. Bi2SiO5film is used as a buffer layer to grow ferroelectric Bi4Ti3O12films because of its relatively high dielectric constant (εr=30). The memory window has a C-V characteristic of about 0.8 V, and the retention time estimated by the zero-bias capacitance for the Pt/100-nm-Bi4Ti3O12/30-nm-Bi2SiO5/Si/Al structure is more than 11 days.
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