(Pb,La)TiO3(PLT) and (Pb,La)(Zr,Ti)O3(PLZT) thin films were successfully grown by MOCVD, using (C2H5)3PbOCH2C(CH3)3, La(dpm)3, Zr(O-t-C4H9)4and Ti(O-t-C3H7)4as precursors. The PLT and PLZT thin films showed good dielectric and ferroelectric properties. PLZT films showed better fatigue properties than PZT films. Large area growth of PLZT thin films on a 6 inch silicon wafer was carried out and uniform PLZT films with a variation in film thickness of ±1.5% could be obtained. The case of La(i-C3H7C5H4)3as a new La precursor for growing PLT and PLZT will be discussed.