Convergent-beam electron diffraction study of strain modulation in GaAs/InGaAs superlattices grown by metal-organic chemical vapour deposition
作者:
K.K. Fung,
P.K. York,
G.E. Fernandez,
J.A. Eades,
J.J. Coleman,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1988)
卷期:
Volume 57,
issue 4
页码: 221-227
ISSN:0950-0839
年代: 1988
DOI:10.1080/09500838808214711
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Convergent-beam electron diffraction has been used to study strain modulation in GaAs/InGaAs superlattices (6% In and 2% In) in plan-view. Reflections from planes inclined to the interface of the superlattice are split with sidebands, the angular separation of which is related to the modulation periodicity. It is inferred from higher-order Laue zone lines that inclined planes on opposite sides of an interface in GaAs and InGaAs layers are rotated towards and away from the interface as a result of distortion due to coherent matching and local relaxation in regions where the GaAs substrate and buffer layer have been ion-milled away.
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