Resonance effects in photoluminescence from deep traps inCdSxSe1−xdoped glasses
作者:
M. Ivanda,
T. Bischof,
G. Lermann,
A. Materny,
W. Kiefer,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 6
页码: 3116-3119
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366555
出版商: AIP
数据来源: AIP
摘要:
We present photoluminescence studies onCdSxSe1−xsemiconductor doped glasses with gap energies ranging from about 2 to 3 eV (400–600 nm). The investigations were performed by near-resonance as well as temperature-dependent resonance Raman spectroscopy. On the basis of the strongly resonant behavior of the deep trap photoluminescence with the excitonic states of the nanocrystallites, we have demonstrated that—besides the effect of photodarkening—inconsistencies in the experimental results of semiconductor doped glasses presented in literature, could be due to changes in the electronic resonance conditions when experimental parameters are changed. ©1997 American Institute of Physics.
点击下载:
PDF
(90KB)
返 回