Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal substrates, have been crystallized in a differential scanning calorimeter (DSC). The MeV implantation energies resulted in amorphous layers of micron thickness whose areal densities were determined using the Rutherford backscattering and channeling of 1‐MeV protons. These techniques allow determination of the amorphous‐crystal interface velocity (which is proportional to the rate of heat evolution &Dgr;H˙ac) and the total enthalpy of crystallization &Dgr;Hac. Amorphous Ge was found to relax continuously to an amorphous state of lower free energy, with a total enthalpy of relaxation of 6.0 kJ/mol before the onset of rapid crystallization. The interface velocity for crystallization on (100) substrates, was found to have an Arrhenius form with an activation energy of 2.17 eV. The value of &Dgr;Hacwas found to be 11.6±0.7 kJ/mol, the same as for samples prepared by deposition. For Si, &Dgr;Hacwas determined to be 11.9±0.7 kJ/mol without any evidence of heat release due to relaxation. The (100) interface velocity was found to have an activation energy of 2.24 eV. The effects of the implant depth profile on the regrowth velocity could also be observed directly in the DSC signal. From the value of &Dgr;Hacand Gibbs free‐energy calculations, the melting temperature of amorphous Si has been determined to beTal=1420 K.