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Use of the channelling technique and the theory of flux peaking effect to determine the location of b in si

 

作者: V.V. Beloshitsky,   N.P. Dikii,   M.A. Kumakhov,   P.P. Matyash,   N.A. Skakun,  

 

期刊: Radiation Effects  (Taylor Available online 1975)
卷期: Volume 25, issue 3  

页码: 167-173

 

ISSN:0033-7579

 

年代: 1975

 

DOI:10.1080/00337577508235386

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

An experimental and theoretical treatment of the determination of : oron atoms in single crystalline silicon, using the channelling effect and flux peaking, is described.

 

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