Use of the channelling technique and the theory of flux peaking effect to determine the location of b in si
作者:
V.V. Beloshitsky,
N.P. Dikii,
M.A. Kumakhov,
P.P. Matyash,
N.A. Skakun,
期刊:
Radiation Effects
(Taylor Available online 1975)
卷期:
Volume 25,
issue 3
页码: 167-173
ISSN:0033-7579
年代: 1975
DOI:10.1080/00337577508235386
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
An experimental and theoretical treatment of the determination of : oron atoms in single crystalline silicon, using the channelling effect and flux peaking, is described.
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