Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low‐pressure metalorganic chemical vapor deposition
作者:
T. Soga,
T. George,
T. Suzuki,
T. Jimbo,
M. Umeno,
E. R. Weber,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 19
页码: 2108-2110
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104975
出版商: AIP
数据来源: AIP
摘要:
The initial stage of epitaxial growth of GaP on Si by low‐pressure metalorganic chemical vapor deposition was characterized by transmission electron microscopy. The growth mode changes from three‐dimensional to two‐dimensional with increasing V/III ratio. GaP on Si grown at a low V/III ratio of 800 contains many dislocations, stacking faults, and microtwins; however, a significant reduction in the density of these defects is observed in GaP grown at high V/III ratio of 3200.
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