Theory of the electronic Raman effect in intermediate valence compounds
作者:
Mario E. Foglio,
期刊:
Journal of Raman Spectroscopy
(WILEY Available online 1981)
卷期:
Volume 10,
issue 1
页码: 52-59
ISSN:0377-0486
年代: 1981
DOI:10.1002/jrs.1250100110
出版商: John Wiley&Sons, Ltd.
数据来源: WILEY
摘要:
AbstractWe present an approximate expression for the electronic Raman scattering intensity of localized impurities, and we employ this result in a simple model of intermediate valence compound with a hybridization term of the Anderson type. We have calculated the relevant time correlation functions using a Green's function technique. Using the published estimates ofp, the probability of finding a Sm ion as Sm3+, determined from the lattice parameters, we were able to compare our expression for the Raman linewidth with published measurements of the linewidth in Sm1–xYxS. The theoretical dependence of the linewidth withxat 300 K gives only qualitative agreement with experiment. Out theory reproduces fairly well the independence of the line shape when samples with 0.15
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