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Interdiffusion of Cr/Pt/Ag metallisation layers on silicon impatt diodes

 

作者: D.V.Morgan,   M.J.Howes,   S.D.Mukherjee,   D.J.Taylor,   P.Brook,  

 

期刊: IEE Journal on Solid-State and Electron Devices  （IET Available online 1977）
卷期: Volume 1, issue 5  

页码: 158-160

 

年代: 1977

 

DOI:10.1049/ij-ssed.1977.0023

 

出版商: IEE

 

数据来源: IET

 

摘要:

Thermal interdiffusion in the Cr/Pt/Ag metallisation system used for silicon impatt diodes has been characterised using Rutherford backscattering of helium ions. Considerable interdiffusion, characterised by an activation energy of 0·5 eV, is observed in the Pt/Ag thin-film boundary, the Cr/Pt interface is found to be stable up to 400°C with practically no observable diffusion.

 

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