A numerical study of cluster center formation in neutron‐irradiated silicon
作者:
Y. Shi,
D. X. Shen,
F. M. Wu,
K. J. Cheng,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 2
页码: 1116-1118
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345799
出版商: AIP
数据来源: AIP
摘要:
A numerical study of the formation of a radiation‐induced defect cluster center in neutron‐irradiated silicon has been performed by solving a set of semilinear parabolic reaction‐diffusion‐coupled equations. It is found that most of the primary displacement defects [interstitial (I) and vacancy (V)] will be annihilated byI‐Vdirect recombination in an extremely short time. In particular, the formation of four‐vacancy defects is independent of the concentration of sinks and impurities in a sample, and of the energy of the recoil particle relatively. The threshold energy for the formation of a vacancy cluster has also been studied. The results are discussed with the experimental observations.
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