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Observation of the track of a misfit dislocation in ordered Ga0.5In0.5P

 

作者: C.S. Baxter,   W.M. Stobbs,   C.J. Gibbings,  

 

期刊: Philosophical Magazine Letters  （Taylor Available online 1993）
卷期: Volume 67, issue 1  

页码: 59-65

 

ISSN:0950-0839

 

年代: 1993

 

DOI:10.1080/09500839308240491

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

We have found that a misfit dislocation which moves within a slightly strained layer of Ga0·5ln0·5P with atomic ordering on {1T1} planes leaves an observable track in the form of an antiphase domain boundary. Here we describe our observations and discuss the possibility of using this material as a model system for the investigation of strain relaxation mechanisms.

 

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