Elimination of SiC/SiO2interface states by preoxidation ultraviolet‐ozone cleaning
作者:
V. V. Afanas’ev,
A. Stesmans,
M. Bassler,
G. Pensl,
M. J. Schulz,
C. I. Harris,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 15
页码: 2141-2143
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115611
出版商: AIP
数据来源: AIP
摘要:
The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2interface states. ©1996 American Institute of Physics.
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