InP metal‐insulated‐semiconductor Schottky contacts using surface oxide layers prepared with bromine water
作者:
K. Kamimura,
T. Suzuki,
A. Kunioka,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 9
页码: 4905-4907
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328362
出版商: AIP
数据来源: AIP
摘要:
Oxide layers prepared with bromine water are found to increase the barrier height for Au‐InP Schottky diodes. Electrical characteristics are measured and the relationships between the preparation conditions and the diode parameters are examined. The typical value of the barrier height and the ideality factor are 0.83 eV and 1.1, respectively. Some instabilities are observed in the diode characteristics.
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