Growth interface breakdown during laser recrystallization from the melt
作者:
A.G. Cullis,
D. T. J. Hurle,
H. C. Webber,
N. G. Chew,
J. M. Poate,
P. Baeri,
G. Foti,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 38,
issue 8
页码: 642-644
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92470
出版商: AIP
数据来源: AIP
摘要:
Morphological instability occurring during high‐velocity Si crystal growth from an impurity containing melt is examined in detail. The experimental conditions are achieved by annealing an ion‐implanted Si layer with pulsed laser radiation. Computer modeling is employed to understand the heat flow and impurity diffusion behavior that occurs. The stability and size of impurity segregation cells observed to occur under particular conditions are related to the predictions of morphological stability theory.
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