Stoichiometry-dependent deep levels inp-type InP
作者:
Jun-ichi Nishizawa,
Kiyoon Kim,
Yutaka Oyama,
Ken Suto,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 7
页码: 3151-3154
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364349
出版商: AIP
数据来源: AIP
摘要:
Photocapacitance measurement is applied to investigate the stoichiometry-dependent deep levels inp-type InP crystals doped with Zn prepared by 4 h annealing at 700 °C under controlled phosphorus vapor pressure. Photocapacitance results reveal three dominant deep levels. A dominant deep level at 1.05 eV above the valence band is detected commonly before and after annealing, and the change of level densities is shown as a function of the phosphorus vapor pressure. Another two deep levels are also detected after annealing at 0.74 eV above the valence band and at 0.51 eV below the conduction band. In view of the deviation from the stoichiometric composition of InP, possible origins of these levels and their optical transition mechanism are discussed. ©1997 American Institute of Physics.
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