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Supershallow levels in indium‐doped silicon

 

作者: G. F. Cerofolini,   G. U. Pignatel,   E. Mazzega,   G. Ottaviani,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 58, issue 6  

页码: 2204-2207

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335988

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Variable temperature Hall‐effect measurements on low‐concentration Si:In samples show the existence of supershallow levels with an activation energy for ionization of about 18 meV. For high concentration Si:In samples, the levels at 18 meV tend to disappear and transform into levels with energy of about 160 meV.

 

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