Deposition of silicon onto a clean Be (0001) surface results in an ordered superstructure which is characterized by the presence of (1/3)‐order spots in the low‐energy electron diffraction pattern of the clean surface. This is the√3×√3−30°structure that was predicted in an earlier report. Epitaxial growth of crystalline Si films is hindered, however, at low temperatures by the low mobility of the adsorbed atoms (the Si films are amorphous) and at high temperatures by the rapid diffusion of Si into the interior of the substrate.